Aqueous cleaner for the removal of post-etch residues

ABSTRACT

Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

FIELD

The present invention relates to compositions for the removal ofpost-etch residue, including titanium-containing, copper-containingand/or tungsten-containing post-etch residue, from microelectronicdevices and methods of making and using the same.

DESCRIPTION OF THE RELATED ART

Interconnect circuitry in semiconductor circuits consists of conductivemetallic circuitry surrounded by insulating dielectric material. In thepast, silicate glass vapor-deposited from tetraethylorthosilicate (TEOS)was widely used as the dielectric material, while alloys of aluminumwere used for metallic interconnects. Demand for higher processingspeeds has led to smaller sizing of circuit elements, along with thereplacement of TEOS and aluminum alloys by higher performance materials.Aluminum alloys have been replaced by copper or copper alloys due to thehigher conductivity of copper. TEOS and fluorinated silicate glass (FSG)have been replaced by the so-called low-k dielectrics, includinglow-polarity materials such as organic polymers, hybridorganic/inorganic materials, organosilicate glass (OSG), andcarbon-doped oxide (CDO) glass. The incorporation of porosity, i.e.,air-filled pores, in these materials further lowers the dielectricconstant of the material.

During dual-damascene processing of integrated circuits,photolithography is used to image a pattern onto a device wafer.Photolithography techniques comprise the steps of coating, exposure, anddevelopment. A wafer is coated with a positive or negative photoresistsubstance and subsequently covered with a mask that defines patterns tobe retained or removed in subsequent processes. Following the properpositioning of the mask, the mask has directed therethrough a beam ofmonochromatic radiation, such as ultraviolet (UV) light or deep UV (DUV)light (≈250 nm or 193 nm), to make the exposed photoresist material moreor less soluble in a selected rinsing solution. The soluble photoresistmaterial is then removed, or “developed,” leaving behind a patternidentical to the mask.

Thereafter, gas-phase plasma etching is used to transfer the patterns ofthe developed photoresist coating to the underlying layers, which mayinclude hardmask, interlevel dielectric (ILD), and/or etch stop layers.Post-plasma etch residues are typically deposited on theback-end-of-the-line (BEOL) structures and if not removed, may interferewith subsequent silicidation or contact formation. Post-plasma etchresidues typically include chemical elements present on the substrateand in the plasma gases. For example, if a TiN hardmask is employed,e.g., as a capping layer over ILD, the post-plasma etch residues includetitanium-containing species, which are difficult to remove usingconventional wet cleaning chemistries. Moreover, conventional cleaningchemistries often damage the ILD, absorb into the pores of the ILDthereby increasing the dielectric constant, and/or corrode the metalstructures. For example, buffered fluoride and solvent-based chemistriesfail to completely remove Ti-containing residues, whilehydroxylamine-containing and ammonia-peroxide chemistries corrodecopper.

In addition to the desirable removal of titanium-containing post-plasmaetch residue, additional materials that are deposited during thepost-plasma etch process such as polymeric residues on the sidewalls ofthe patterned device, copper-containing residues in the open viastructures of the device, and tungsten-containing residues are alsopreferably removed. To date, no single wet cleaning composition hassuccessfully removed all of residue material while simultaneously beingcompatible with the ILD, other low-k dielectric materials, and metalinterconnect materials.

The integration of new materials, such as low-k dielectrics, intomicroelectronic devices places new demands on cleaning performance. Atthe same time, shrinking device dimensions reduce the tolerance forchanges in critical dimensions and damage to device elements. Etchingconditions can be modified in order to meet the demands of the newmaterials. Likewise, post-plasma etch cleaning compositions must bemodified. The cleaner should not damage the underlying dielectricmaterial or corrode metallic interconnect materials, e.g., copper,tungsten, cobalt, aluminum, ruthenium, titanium and nitrides andsilicides thereof, on the device.

Towards that end, it is an object of the present invention to provideimproved compositions for the effective removal of post-plasma etchresidue including, but not limited to, titanium-containing residue,polymeric sidewall residue, copper-containing via residue,tungsten-containing residue, and/or cobalt-containing residue frommicroelectronic devices, said compositions being compatible with ILD,metal interconnect materials, and/or capping layers.

SUMMARY

The present invention generally relates to cleaning compositions andmethods of making and using same. One aspect of the invention relates toa composition and process for cleaning post-plasma etch residue frommicroelectronic devices having said residue thereon, whilesimultaneously not compromising the metallic and ILD materials on themicroelectronic device surface.

In one aspect, an aqueous cleaning composition is described, saidcomposition comprising at least one corrosion inhibitor, water,optionally at least one chelating agent, optionally at least oneetchant, optionally at least one passivating agent, and optionally atleast one complexing agent. The aqueous cleaning composition is suitablefor cleaning post-plasma etch residue from a microelectronic devicehaving said residue thereon.

In another aspect, an aqueous cleaning composition is described, saidcomposition comprising at least one corrosion inhibitor, water, at leastone etchant, at least one passivating agent, optionally at least onechelating agent, and optionally at least one complexing agent. Theaqueous cleaning composition is suitable for cleaning post-plasma etchresidue from a microelectronic device having said residue thereon.

In yet another aspect, a kit is described, said kit comprising, in oneor more containers, one or more of the following reagents for forming anaqueous cleaning composition, said one or more reagents selected fromthe group consisting of at least one corrosion inhibitor, water,optionally at least one chelating agent, optionally at least oneetchant, optionally at least one passivating agent, and optionally atleast one complexing agent and wherein the kit is adapted to form anaqueous cleaning composition suitable for cleaning post-plasma etchresidue from a microelectronic device having said residue thereon.

In still another aspect, a method of removing material from amicroelectronic device having said material thereon is described, saidmethod comprising contacting the microelectronic device with an aqueouscleaning composition for sufficient time to at least partially removesaid material from the microelectronic device, wherein the aqueouscleaning composition includes at least one corrosion inhibitor, water,optionally at least one chelating agent, optionally at least oneetchant, optionally at least one passivating agent, and optionally atleast one complexing agent.

In another aspect, a method of removing material from a microelectronicdevice having said material thereon is described, said method comprisingcontacting the microelectronic device with an aqueous cleaningcomposition for sufficient time to at least partially remove saidmaterial from the microelectronic device, wherein the aqueous cleaningcomposition includes at least one corrosion inhibitor, water, at leastone etchant, at least one passivating agent, optionally at least onechelating agent, and optionally at least one complexing agent.

Other aspects, features and advantages of the invention will be morefully apparent from the ensuing disclosure and appended claims.

DETAILED DESCRIPTION, AND PREFERRED EMBODIMENTS THEREOF

The present invention generally relates to compositions for removingresidue, preferably post-etch residue, more preferablytitanium-containing post-etch residue, polymeric sidewall residue,copper-containing via and line residue and/or tungsten-containingpost-etch residue from microelectronic devices having said residuethereon, said compositions preferably being compatible with ultra low-k(ULK) ILD materials, such as OSG and porous-CDO, the metallicinterconnect materials, e.g., copper and tungsten, the hardmask cappinglayers, e.g., TiN, and cobalt capping layers, e.g., CoWP, on themicroelectronic device surface. Further, the present invention generallyrelates to methods of removing residue, preferably post-etch residue,more preferably titanium-containing post-etch residue, polymericsidewall residue, copper-containing via and line residue,tungsten-containing post-etch residue, and/or cobalt-containingpost-etch residue, from microelectronic devices having said residuethereon, using compositions, said compositions preferably beingcompatible with ultra low-k (ULK) ILD materials, the metallicinterconnect materials, and the capping layers, on the microelectronicdevice surface.

For ease of reference, “microelectronic device” corresponds tosemiconductor substrates, flat panel displays, phase change memorydevices, solar panels and other products including solar cell devices,photovoltaics, and microelectromechanical systems (MEMS), manufacturedfor use in microelectronic, integrated circuit, energy collection, orcomputer chip applications. It is to be understood that the term“microelectronic device” is not meant to be limiting in any way andincludes any substrate or structure that will eventually become amicroelectronic device or microelectronic assembly. Notably, themicroelectronic device substrate may be patterned, blanketed and/or atest substrate.

“Post-etch residue” and “post-plasma etch residue,” as used herein,corresponds to material remaining following gas-phase plasma etchingprocesses, e.g., BEOL dual-damascene processing. The post-etch residuemay be organic, organometallic, organosilicic, or inorganic in nature,for example, silicon-containing material, titanium-containing material,nitrogen-containing material, oxygen-containing material, polymericresidue material, copper-containing residue material (including copperoxide residue), tungsten-containing residue material, cobalt-containingresidue material, etch gas residue such as chlorine and fluorine, andcombinations thereof.

As defined herein, “low-k dielectric material” and ULK corresponds toany material used as a dielectric material in a layered microelectronicdevice, wherein the material has a dielectric constant less than about3.5. Preferably, the low-k dielectric materials include low-polaritymaterials such as silicon-containing organic polymers,silicon-containing hybrid organic/inorganic materials, organosilicateglass (OSG), TEOS, fluorinated silicate glass (FSG), silicon dioxide,and carbon-doped oxide (CDO) glass. Most preferably, the low-kdielectric material is deposited using organosilane and/ororganosiloxane precursors. It is to be appreciated that the low-kdielectric materials may have varying densities and varying porosities.

As defined herein, the term “polymeric sidewall residue” corresponds tothe residue that remains on the sidewalls of the patterned devicesubsequent to post-plasma etching processes. The residue issubstantially polymeric in nature however, it should be appreciated thatinorganic species, e.g., titanium, silicon, tungsten, cobalt and/orcopper-containing species, may be present in the sidewall residue aswell.

As used herein, “about” is intended to correspond to ±5% of the statedvalue.

As used herein, “suitability” for cleaning post-etch residue from amicroelectronic device having said residue thereon corresponds to atleast partial removal of said residue from the microelectronic device.Preferably, at least about 90% of one or more of the materials, morepreferably at least 95% of one or more of the materials, and mostpreferably at least 99% of one or more of the materials to be removedare removed from the microelectronic device.

“Capping layer” as used herein corresponds to materials deposited overdielectric material and/or metal material, e.g., cobalt, to protect sameduring the plasma etch step. Hardmask capping layers are traditionallysilicon, silicon nitrides, silicon oxynitrides, titanium nitride,titanium oxynitride, titanium, tantalum, tantalum nitride, molybdenum,tungsten, combinations thereof, and other similar compounds. Cobaltcapping layers include CoWP and other cobalt-containing materials ortungsten-containing materials.

“Substantially devoid” is defined herein as less than 2 wt. %,preferably less than 1 wt. %, more preferably less than 0.5 wt. %, andmost preferably less than 0.1 wt. %.

As used herein, the term “semi-aqueous” refers to a mixture of water andorganic components.

As defined herein, “complexing agent” includes those compounds that areunderstood by one skilled in the art to be complexing agents, chelatingagents, sequestering agents, and combinations thereof. Complexing agentswill chemically combine with or physically hold the metal atom and/ormetal ion to be removed using the compositions described herein.

As defined herein, a “strong base” includes alkali and alkaline earthmetal hydroxide salts such as LiOH, NaOH, KOH, RbOH, CsOH, Mg(OH)₂,Ca(OH)₂, Sr(OH)₂ and Ba(OH)₂, as well as quaternary ammonium hydroxideshaving the formula NR¹R²R³R⁴OH, where R¹, R², R³ and R⁴ are the same asor different from one another and are selected from the group consistingof C₁-C₆ alkyls, C₆-C₁₀ aryls, and combinations thereof.

Compositions of the invention may be embodied in a wide variety ofspecific formulations, as hereinafter more fully described.

In all such compositions, wherein specific components of the compositionare discussed in reference to weight percentage ranges including a zerolower limit, it will be understood that such components may be presentor absent in various specific embodiments of the composition, and thatin instances where such components are present, they may be present atconcentrations as low as 0.001 weight percent, based on the total weightof the composition in which such components are employed.

Titanium-containing post-etch residue materials are notoriouslydifficult to remove using the ammonia-containing compositions of theprior art. The present inventors discovered a cleaning composition thatis substantially devoid of ammonia and/or strong bases (e.g., NaOH, KOH,etc.) and preferably, substantially devoid of oxidizing agents, whicheffectively and selectively removes titanium-containing residues fromthe surface of a microelectronic device having same thereon. Inaddition, the composition will substantially remove polymeric sidewallresidue, copper-containing residue, cobalt-containing residue, and/ortungsten-containing residue without substantially damaging theunderlying ILD, metal interconnect materials, e.g., Cu, Al, Co and W,and/or the capping layers. Further, the compositions may be usedregardless of whether the trench or via is etched first (i.e., atrench-first or via-first scheme). Further, the composition can beformulated to substantially remove TiN layers from the surface of amicroelectronic device having same thereon.

In a first aspect, the cleaning compositions described herein areaqueous or semi-aqueous and include at least one corrosion inhibitor,water, optionally at least one etchant source, optionally at least onemetal-chelating agent, optionally at least one complexing agent, andoptionally at least one passivating agent, for removing post-plasma etchresidues from the surface of a microelectronic device having samethereon, wherein the post-plasma etch residue comprises a speciesselected from the group consisting of titanium-containing residues,polymeric residues, copper-containing residues, tungsten-containingresidues, cobalt-containing residues, and combinations thereof. Inanother embodiment, the cleaning compositions described herein includeat least one corrosion inhibitor, water, at least one etchant source,optionally at least one metal-chelating agent, optionally at least onecomplexing agent, and optionally at least one passivating agent. Instill another embodiment, the cleaning compositions include at least onecorrosion inhibitor, water, at least one metal-chelating agent,optionally at least one etchant source, optionally at least onecomplexing agent, and optionally at least one passivating agent. Instill another embodiment, the cleaning compositions include at least onecorrosion inhibitor, water, at least one complexing agent, optionally atleast one etchant source, optionally at least one passivating agent, andoptionally at least one metal-chelating agent. In another embodiment,the cleaning compositions include at least one corrosion inhibitor,water, at least one passivating agent, optionally at least onemetal-chelating agent, optionally at least one complexing agent, andoptionally at least one etchant source. In another embodiment, thecleaning compositions include at least one corrosion inhibitor, water,at least one etchant source, at least one metal-chelating agent,optionally at least one passivating agent, and optionally at least onecomplexing agent. In yet another embodiment, the cleaning compositionsinclude at least one corrosion inhibitor, water, at least one etchantsource, at least one complexing agent, optionally at least onepassivating agent, and optionally at least one metal-chelating agent. Inanother embodiment, the cleaning compositions include at least onecorrosion inhibitor, water, at least one complexing agent, at least onemetal-chelating agent, optionally at least one passivating agent, andoptionally at least one etchant source. In another embodiment, thecleaning compositions include at least one corrosion inhibitor, water,at least one etchant source, at least one passivating agent, optionallyat least one complexing agent, and optionally at least onemetal-chelating agent. In still another embodiment, the cleaningcompositions include at least one corrosion inhibitor, water, at leastone complexing agent, at least one metal-chelating agent, and at leastone etchant source. Preferably, the amount of water present is in arange from about 50 wt % to about 99 wt %, based on the total weight ofthe composition. In each embodiment, at least one surfactant, a sourceof silica, and/or at least one organic solvent may be added.

In one embodiment, the aqueous composition for cleaning post-plasma etchresidues selected from the group consisting of titanium-containingresidues, polymeric residues, copper-containing residues,tungsten-containing residues, cobalt-containing residues, andcombinations thereof, includes at least one corrosion inhibitor, water,optionally at least one etchant, optionally at least one metal chelatingagent, optionally at least one passivating agent, and optionally atleast one complexing agent, present in the following ranges, based onthe total weight of the composition.

component % by weight corrosion inhibitor(s) about 0.01% to about 20%water about 50% to about 97% etchant source(s) 0% to about 50 wt. %chelating agent(s) 0% to about 10% passivating agent(s) 0 to about 5%complexing agent(s) 0 to about 10% surfactant(s) 0 to about 10% organicsolvent(s) 0 to about 10%

In the broad practice, the cleaning composition may comprise, consistof, or consist essentially of: (i) at least one corrosion inhibitor,water, optionally at least one etchant source, optionally at least onemetal-chelating agent, optionally at least one passivating agent, andoptionally at least one complexing agent; (ii) at least one corrosioninhibitor, water, at least one etchant source, optionally at least onemetal-chelating agent, optionally at least one passivating agent, andoptionally at least one complexing agent; (iii) at least one corrosioninhibitor, water, at least one metal-chelating agent, optionally atleast one etchant source, optionally at least one passivating agent, andoptionally at least one complexing agent; (iv) at least one corrosioninhibitor, water, at least one complexing agent, optionally at least oneetchant source, optionally at least one passivating agent, andoptionally at least one metal-chelating agent; (v) at least onecorrosion inhibitor, water, at least one etchant source, at least onemetal-chelating agent, optionally at least one passivating agent andoptionally at least one complexing agent; (vi) at least one corrosioninhibitor, water, at least one etchant source, at least one complexingagent, optionally at least one passivating agent and optionally at leastone metal-chelating agent; (vii) at least one corrosion inhibitor,water, at least one complexing agent, at least one metal-chelatingagent, optionally at least one passivating agent and optionally at leastone etchant source; (viii) at least one corrosion inhibitor, water, atleast one complexing agent, at least one metal-chelating agent, and atleast one etchant source; (ix) at least one corrosion inhibitor, water,at least one passivating agent, optionally at least one metal-chelatingagent, optionally at least one complexing agent, and optionally at leastone etchant source; (x) at least one corrosion inhibitor, water, atleast one etchant source, at least one passivating agent, optionally atleast one complexing agent, and optionally at least one metal-chelatingagent.

The water is included to serve as a solvent and assist in thedissolution of residues, e.g., water-soluble copper oxide residues. Thewater is preferably deionized.

In a preferred embodiment, the aqueous cleaning composition issubstantially devoid of oxidizing agents such as peroxide-containingcompounds and nitric acid. In another preferred embodiment, the aqueouscleaning composition is substantially devoid of abrasive material priorto contact with the substrate to be cleaned.

The pH range of the aqueous cleaning composition is about 0 to about 7,preferably about 0 to about 5, even more preferably about 0 to about 4,and most preferably about 0 to about 3.

The etchant sources assist in breaking up and solubilizing the post-etchresidue species, aiding in polymer sidewall residue removal and slightlyetching of the TiN hardmask. Etchant sources contemplated hereininclude, but are not limited to: hydrofluoric acid (HF); fluorosilicicacid (H₂SiF₆); fluoroboric acid; ammonium fluorosilicate salt((NH₄)₂SiF₆); tetramethylammonium hexafluorophosphate; ammonium fluoridesalts; ammonium bifluoride salts; quaternary ammonium tetrafluoroboratesand quaternary phosphonium tetrafluoroborates having the formula NR₄BF₄and PR₄BF₄, respectively, wherein R may be the same as or different fromone another and is selected from the group consisting of hydrogen,straight-chained, branched, or cyclic C₁-C₆ alkyl (e.g., methyl, ethyl,propyl, butyl, pentyl, hexyl), and straight-chained or branched C₆-C₁₀aryl (e.g., benzyl); tetrabutylammonium tetrafluoroborate (TBA-BF₄);propylene glycol/HF in a weight ratio of about 90:10 to about 99:1,preferably about 93:7 to about 98:2; propylene glycol/tetraalkylammoniumfluoride, where the alkyl groups may be the same as or different fromone another and are selected from the group consisting of straightchained or branched C₁-C₆ alkyl groups (e.g., methyl, ethyl, propyl,butyl, pentyl, hexyl), in a weight ratio of about 75:25 to about 95:5,preferably about 80:20 to about 90:10; propyleneglycol/tetrabutylammonium fluoride in a weight ratio of about 75:25 toabout 95:5, preferably about 80:20 to about 90:10; propyleneglycol/benzyltrimethylammonium fluoride in a weight ratio of about 75:25to about 95:5, preferably about 80:20 to about 90:10; and combinationsthereof. Preferably, the etchant source comprises ammonium bifluoride,quaternary ammonium tetrafluoroborates (e.g., tetramethylammoniumtetrafluoroborate, tetraethylammonium tetrafluoroborate,tetrapropylammonium tetrafluoroborate, tetrabutylammoniumtetrafluoroborate), quaternary phosphonium tetrafluoroborates, orcombinations thereof. Preferably, the etchant source comprises ammoniumbifluoride, tetrabutylammonium tetrafluoroborate, or a combinationthereof. It should be appreciated by the skilled artisan that quaternaryammonium tetrafluoroborates and quaternary phosphoniumtetrafluoroborates may be generated in situ.

The organic solvents, when present, assist in solubilization of thecomponents of the aqueous cleaning composition and organic residues, wetthe surface of the microelectronic device structure to facilitateresidue removal, prevent residue redeposition, and/or passivate theunderlying materials, e.g., ULK. Organic solvents contemplated hereininclude, but are not limited to, alcohols, ethers, pyrrolidinones,glycols, amines, and glycol ethers, including, but not limited to,methanol, ethanol, isopropanol, butanol, and higher alcohols (such asC₂-C₄ diols and C₂-C₄ triols), tetrahydrofurfuryl alcohol (THFA),halogenated alcohols (such as 3-chloro-1,2-propanediol,3-chloro-1-propanethiol, 1-chloro-2-propanol, 2-chloro-1-propanol,3-chloro-1-propanol, 3-bromo-1,2-propanediol, 1-bromo-2-propanol,3-bromo-1-propanol, 3-iodo-1-propanol, 4-chloro-1-butanol,2-chloroethanol), dichloromethane, chloroform, acetic acid, propionicacid, trifluoroacetic acid, tetrahydrofuran (THF), N-methylpyrrolidinone(NMP), cyclohexylpyrrolidinone, N-octylpyrrolidinone,N-phenylpyrrolidinone, methyldiethanolamine, methyl formate, dimethylformamide (DMF), dimethylsulfoxide (DMSO), tetramethylene sulfone(sulfolane), diethyl ether, phenoxy-2-propanol (PPh), propriophenone,ethyl lactate, ethyl acetate, ethyl benzoate, acetonitrile, acetone,ethylene glycol, propylene glycol (PG), 1,3-propanediol,1,4-propanediol, dioxane, butyryl lactone, butylene carbonate, ethylenecarbonate, propylene carbonate, dipropylene glycol, diethylene glycolmonomethyl ether, triethylene glycol monomethyl ether, diethylene glycolmonoethyl ether, triethylene glycol monoethyl ether, ethylene glycolmonopropyl ether, ethylene glycol monobutyl ether, diethylene glycolmonobutyl ether (i.e., butyl carbitol), triethylene glycol monobutylether, ethylene glycol monohexyl ether, diethylene glycol monohexylether, ethylene glycol phenyl ether, propylene glycol methyl ether,dipropylene glycol methyl ether (DPGME), tripropylene glycol methylether (TPGME), dipropylene glycol dimethyl ether, dipropylene glycolethyl ether, propylene glycol n-propyl ether, dipropylene glycoln-propyl ether (DPGPE), tripropylene glycol n-propyl ether, propyleneglycol n-butyl ether, dipropylene glycol n-butyl ether, tripropyleneglycol n-butyl ether, propylene glycol phenyl ether, dipropylene glycolmethyl ether acetate, dibasic ester, glycerine carbonate, N-formylmorpholine, triethyl phosphate, and combinations thereof. In addition,the organic solvent may comprise other amphiphilic species, i.e.,species that contain both hydrophilic and hydrophobic moieties similarto surfactants. Hydrophobic properties may generally be imparted byinclusion of a molecular group consisting of hydrocarbon or fluorocarbongroups and the hydrophilic properties may generally be imparted byinclusion of either ionic or uncharged polar functional groups.Preferably, the organic solvent includes tripropylene glycol methylether (TPGME), dipropylene glycol methyl ether (DPGME), propyleneglycol, and combinations thereof. When present, the composition includesat least 0.01 wt % organic solvent, based on the total weight of thecomposition.

The metal corrosion inhibitors serve to eliminate over-etching ofmetals, e.g., copper, tungsten, and/or cobalt interconnect metals.Suitable corrosion inhibitors include, but are not limited to, azolessuch as benzotriazole (BTA), 1,2,4-triazole (TAZ), 5-aminotetrazole(ATA), 1-hydroxybenzotriazole, 5-amino-1,3,4-thiadiazol-2-thiol,3-amino-1H-1,2,4 triazole, 3,5-diamino-1,2,4-triazole, tolyltriazole,5-phenyl-benzotriazole, 5-nitro-benzotriazole,3-amino-5-mercapto-1,2,4-triazole, 1-amino-1,2,4-triazole,2-(5-amino-pentyl)-benzotriazole, 1-amino-1,2,3-triazole,1-amino-5-methyl-1,2,3-triazole, 3-mercapto-1,2,4-triazole,3-isopropyl-1,2,4-triazole, 5-phenylthiol-benzotriazole,halo-benzotriazoles (halo=F, Cl, Br or I), naphthotriazole,1H-tetrazole-5-acetic acid, 2-mercaptobenzothiazole (2-MBT),1-phenyl-2-tetrazoline-5-thione, 2-mercaptobenzimidazole (2-MBI),4-methyl-2-phenylimidazole, 2-mercaptothiazoline,2,4-diamino-6-methyl-1,3,5-triazine, thiazole, imidazole, benzimidazole,triazine, methyltetrazole, Bismuthiol I, 1,3-dimethyl-2-imidazolidinone,1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole,diaminomethyltriazine, imidazoline thione,4-methyl-4H-1,2,4-triazole-3-thiol, 5-amino-1,3,4-thiadiazole-2-thiol,benzothiazole, tritolyl phosphate, indazole, DNA bases (e.g., adenine,cytosine, guanine, thymine), phosphate inhibitors, amines, pyrazoles,iminodiacetic acid (IDA), propanethiol, silanes, secondary amines,benzohydroxamic acids, heterocyclic nitrogen inhibitors, citric acid,ascorbic acid, thiourea, 1,1,3,3-tetramethylurea, urea, ureaderivatives, uric acid, potassium ethylxanthate, glycine,dodecylphosphonic acid (DDPA), and mixtures thereof. Dicarboxylic acidssuch as oxalic acid, malonic acid, succinic acid, nitrilotriacetic acid,and combinations thereof are also useful copper passivator species. Itis generally accepted that azoles chemisorb onto the copper surface andform an insoluble cuprous surface complex. Suitable tungsten corrosioninhibitor include, but are not limited to, sulfolane,2-mercaptothiazoline, 2,3,5-trimethylpyrazine,2-ethyl-3,5-dimethylpyrazine, quinoxaline, acetyl pyrrole, pyridazine,histidine, pyrazine, glycine, benzimidazole, benzotriazole (BTA),iminodiacetic acid (IDA), glutathione (reduced), cysteine,2-mercaptobenzimidazole, cystine, thiophene, mercapto pyridine N-oxide,thiamine HCl, tetraethyl thiuram disulfide, 1,2,4-triazole,2,5-dimercapto-1,3-thiadiazoleascorbic acid, ascorbic acid, andcombinations thereof, preferably sulfolane, pyrazine, glycine,histidine, ascorbic acid, and combinations thereof.

Preferably, the corrosion inhibitor includes BTA, TAZ,5-amino-1,3,4-thiadiazol-2-thiol, dodecylphosphonic acid, a combinationof BTA and TAZ or any other combination thereof. When present, thecomposition includes at least 0.01 wt % corrosion inhibitor, based onthe total weight of the composition.

The inclusion of the chelating agent serves to chelate the oxidizedcopper and/or tungsten metals in the post-etch residue species and/orreact with TiN and/or titanium-containing residues. Suitable chelatingagents include, but are not limited to: fluorinated β-diketone chelatingagents such as 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (hfacH),1,1,1-trifluoro-2,4-pentanedione (tfac), and acetylacetonate (acac);iminodiacetic acid; pyrazolates; amidinates; guanidinates; ketoimines;dienes; polyamines; ethylenediaminetetraacetic acid (EDTA);1,2-cyclohexanediamine-N,N,N′,N′-tetraacetic acid (CDTA); etidronicacid; methanesulfonic acid; hydrochloric acid; acetic acid;acetylacetone; alkylamines; arylamines; glycolamines; alkanolamines;triazoles; thiazoles; tetrazoles; imidazoles; 1,4-benzoquinone;8-hydroxyquinoline; salicylidene aniline; tetrachloro-1,4-benzoquinone;2-(2-hydroxyphenyl)-benzoxazol; 2-(2-hydroxyphenyl)-benzothiazole;hydroxyquinoline sulfonic acid (HQSA); sulfosalicylic acid (SSA);salicylic acid (SA); tetramethylammonium halides, e.g., fluoride,chloride, bromide, iodide; and amines and amine-N-oxides including, butnot limited to, pyridine, 2-ethylpyridine, 2-methoxypyridine andderivatives thereof such as 3-methoxypyridine, 2-picoline, pyridinederivatives, dimethylpyridine, piperidine, piperazine, triethylamine,triethanolamine, ethylamine, methylamine, isobutylamine,tert-butylamine, tributylamine, dipropylamine, dimethylamine, diglycolamine, monoethanolamine, methyldiethanolamine, pyrrole, isoxazole,1,2,4-triazole, bipyridine, pyrimidine, pyrazine, pyridazine, quinoline,isoquinoline, indole, imidazole, N-methylmorpholine-N-oxide (NMMO),trimethylamine-N-oxide, triethylamine-N-oxide, pyridine-N-oxide,N-ethylmorpholine-N-oxide, N-methylpyrrolidine-N-oxide,N-ethylpyrrolidine-N-oxide, 1-methylimidazole, diisopropylamine,diisobutylamine, aniline, aniline derivatives,pentamethyldiethylenetriamine (PMDETA), and combinations of any of theabove. Preferably, the chelating agent is methanesulfonic acid,hydrochloric acid, PMDETA, and combinations thereof. When present, thecomposition includes at least 0.01 wt % chelating agent, based on thetotal weight of the composition.

The complexing agents preferably have a high affinity foraluminum-containing residues. Complexing agents contemplated include,but are not limited to, aminocarboxylic acids, organic acids andderivatives thereof, phosphonic acids and derivatives thereof, andcombinations thereof including: butylenediaminetetraacetic acid,diethylenetriaminepentaacetic acid (DTPA), ethylenediaminetetrapropionicacid, (hydroxyethyl)ethylenediaminetriacetic acid (HEDTA),N,N,N′,N′-ethylenediaminetetra(methylenephosphonic) acid (EDTMP),triethylenetetraminehexaacetic acid (TTHA),1,3-diamino-2-hydroxypropane-N,N,N′,N′-tetraacetic acid (DHPTA),methyliminodiacetic acid, propylenediaminetetraacetic acid,1,5,9-triazacyclododecane-N,N′,N″-tris(methylenephosphonic acid)(DOTRP),1,4,7,10-tetraazacyclododecane-N,N′,N″,N′″-tetrakis(methylenephosphonicacid) (DOTP), nitrilotris(methylene)triphosphonic acid,diethylenetriaminepenta(methylenephosphonic acid) (DETAP),aminotri(methylenephosphonic acid), 1-hydroxyethylidene-1,1-diphosphonicacid (HEDP), bis(hexamethylene)triamine phosphonic acid,1,4,7-triazacyclononane-N,N′,N″-tris(methylenephosphonic acid (NOTP),2-phosphonobutane-1,2,4-tricarboxylic acid, nitrilotriacetic acid (NTA),citric acid, tartaric acid, gluconic acid, saccharic acid, glycericacid, oxalic acid, phthalic acid, maleic acid, mandelic acid, malonicacid, lactic acid, dihydroxybenzoic acid, catechol, gallic acid, propylgallate, pyrogallol, cysteine, dihydroxysalicylic acid, glyphosphate,N-(Phosphonomethyl)-iminodiacetic acid, formic acid, propanoic acid,butanoic acid, sulfate ions, N-(2-Hydroxyethyl)-iminodiacetic acid,pyridine-2,5-dicarboxylic acid, pyridine-2,6-dicarboxylic acid,7-Iodo-8-hydroxyquinoline-5-sulfonic acid, 2-amino-2-propylphosphonicacid, 1,2-dihydroxybenzene-4-sulfonic acid, 4,5-dihydroxy-1,3-benzenedisulfonic acid (Tiron), solochrome violet R, 3-hydroxy-2-naphthoicacid, chromotropic acid, nitroacetic acid, oxydiacetic acid,thiodiacetic acid, 8-hydroxy-7-(arylazo)-quinoline-5-sulfonic acid,2-oxobutanoic acid, acetoacetic acid, phenylserine, L-ascorbic acid,squaric acid, acetohydroxamic acid, 3-hydroxy-5,7-disulfo-2-naphthoicacid, 2,3-dihydroxynaphthalene-6-sulfonic acid, sulfoxine, oxine,succinic acid, 3,4-dihydroxybenzoic acid,2-(3,4-dihydroxyphenyl)-2-(1,1-benzopyran)-3,5,7-triol,3-hydroxy-7-sulfo-2-naphthoic acid, 1,2-dihydroxynaphthalene-4-sulfonicacid, N,N-bis(2-hydroxyethyl)glycine, N-(phosphonomethyl)-iminodiaceticacid, iminobis(methylenephosphonic acid), D-gluconic acid, tartaricacid, 1-oxopropane-1,2-dicarboxylic acid, propane-1,2,3-tricarboxylicacid,N,N′,N″-tris[2-(N-hydroxycarbamoyl)ethyl]-1,3,5-benzenetricarboxamide(BAMTPH), desferriferrioxamine-B, 1,7-dihydroxy-4-sulfo-2-naphthanoicacid, aspartic acid, glutamic acid, pyridoxal-5-(dihydrogenphosphate),pyridoxal, amino(phenyl)methylene-diphosphoric acid, ethylene glycoltetraacetic acid (EGTA),ethylenebis(imino-(2-hydroxyphenyl)methylene(methyl)-phosphonic acid)),N-(2-hydroxyethyl)-ethylenedinitrilo-N,N′,N′-triacetic acid,trimethylenedinitrilotetracetic acid,(2-dihydroxytrimethylene)-dinitrilotetracetic acid, xylenol orange,methylthymol blue, 3-hydroxyglutamic acid, L-phosphoserine,DL-amino-3-phosphopropanoic acid, and combinations thereof.

The compositions may optionally further include a surfactant to assistin residue removal, wet the surface, and/or prevent residueredeposition. Illustrative surfactants include, but are not limited to,amphoteric salts, cationic surfactants, anionic surfactants, fluoroalkylsurfactants, SURFONYL® 104, TRITON® CF-21, ZONYL® UR, ZONYL® FSO-100,ZONYL® FSN-100, 3M Fluorad fluorosurfactants (i.e., FC-4430 andFC-4432), dioctylsulfosuccinate salt, 2,3-dimercapto-1-propanesulfonicacid salt, dodecylbenzenesulfonic acid, polyethylene glycols,polypropylene glycols, polyethylene or polypropylene glycol ethers,carboxylic acid salts, R₁ benzene sulfonic acids or salts thereof (wherethe R₁ is a straight-chained or branched C₈-C₁₈ alkyl group),amphiphilic fluoropolymers, polyethylene glycols, polypropylene glycols,polyethylene or polypropylene glycol ethers, carboxylic acid salts,dodecylbenzenesulfonic acid, polyacrylate polymers, dinonylphenylpolyoxyethylene, silicone or modified silicone polymers, acetylenicdiols or modified acetylenic diols, alkylammonium or modifiedalkylammonium salts, as well as combinations comprising at least one ofthe foregoing surfactants, sodium dodecyl sulfate, zwitterionicsurfactants, aerosol-OT (AOT) and fluorinated analogues thereof, alkylammonium, perfluoropolyether surfactants, 2-sulfosuccinate salts,phosphate-based surfactants, sulfur-based surfactants, andacetoacetate-based polymers. When present, the composition includes atleast 0.01 wt % surfactant, based on the total weight of thecomposition.

The compositions may further include a source of silica. The silica maybe added to the composition as a fine silica powder, or as atetraalkoxysilane such as TEOS, preferably at a ratio of etchant tosilica source of about 4:1 to about 5:1. In a particularly preferredembodiment, the etchant source is fluorosilicic acid and the silicasource is TEOS. The preferred embodiment further includes a glycol basedsolvent to facilitate the dissolution of the silica source in thecomposition. When present, the composition includes at least 0.01 wt %silica, based on the total weight of the composition.

The low-k passivating agents may be included to reduce the chemicalattack of the low-k layers and to protect the wafer from additionaloxidation. Boric acid is a presently preferred low-k passivating agent,although other hydroxyl additives may also be advantageously employedfor such purpose, e.g., 3-hydroxy-2-naphthoic acid, malonic acid,iminodiacetic acid, and mixtures thereof. Preferably, the low-kpassivating agent comprises iminodiacetic acid, boric acid, or acombination thereof. When present, the composition includes at least0.01 wt % low-k passivating agent, based on the total weight of thecomposition. Preferably, less than 2 wt. % of the underlying low-kmaterial is etched/removed using the removal compositions describedherein, more preferably less than 1 wt. %, most preferably less than 0.5wt. %, based on the total weight of the underlying low-k material.

In a particularly preferred embodiment, the aqueous compositioncomprises, consists of, or consists essentially of BTA, TAZ, ammoniumbifluoride, boric acid, and water. In another particularly preferredembodiment, the aqueous composition comprises, consists of, or consistsessentially of BTA, TAZ, ammonium bifluoride, tetrabutylammoniumtetrafluoroborate, boric acid, and water. In still another particularlypreferred embodiment, the aqueous composition comprises, consists of, orconsists essentially of ammonium bifluoride, boric acid,dodecylphosphonic acid, and water.

The aqueous compositions described herein are preferably devoid ofabrasive material (e.g., silica, alumina, other abrasives used duringchemical mechanical polishing processes), oxidizing agents, ammonia,strong bases, and an amidoxime complexing agent. Although disclosed asan optional component, most preferably the aqueous compositions aresubstantially devoid of organic solvents and silica sources.

In another embodiment, the aqueous compositions described herein furtherinclude post-plasma etch residue, wherein the post-plasma etch residuecomprises residue material selected from the group consisting oftitanium-containing residue, polymeric-residue, copper-containingresidue, tungsten-containing residue, cobalt-containing residue, andcombinations thereof. The residue material may be dissolved and/orsuspended in the aqueous compositions.

In still another embodiment, the aqueous compositions described hereinfurther include titanium nitride material. The TiN material may bedissolved and/or suspended in the aqueous compositions.

In one embodiment, the compositions are useful for the selective removalof TiN, sidewall residue, and/or post-etch residue without substantiallyetching patterned or blanket tungsten layers, copper layers and/or ULKlayers. In another embodiment, the compositions are useful for theselective removal of sidewall residue, and/or post-etch residue withoutsubstantially etching patterned or blanket tungsten layers, TiN, copperlayers and/or ULK layers.

In addition to a liquid solution, it is also contemplated herein thatthe compositions of both aspects of the invention may be formulated asfoams, fogs, subcritical or supercritical fluids (i.e., wherein thesolvent is CO₂, etc., instead of water).

Advantageously, the cleaning compositions described herein effectivelyremove post-plasma etch residue from the top surface, the sidewalls, andthe vias and lines of the microelectronic device without compromisingthe ILD, capping layers, and/or the metal interconnect layers present onthe device. In addition, the compositions may be used regardless ofwhether the trench or the via is etched first.

It will be appreciated that in general cleaning applications, it iscommon practice to make highly concentrated forms to be used at extremedilutions. For example, the cleaning compositions may be manufactured ina more concentrated form, including at least about 20 wt % water forsolubility purposes, and thereafter diluted with additional solvent(e.g., water and/or organic solvent) at the manufacturer, before use,and/or during use at the fab. Dilution ratios may be in a range fromabout 0.1 part diluent:1 part removal composition concentrate to about100 parts diluent:1 part removal composition concentrate. It isunderstood that upon dilution, the weight percent ratios of many of thecomponents of the removal composition will remain unchanged.

The compositions described herein are easily formulated by simpleaddition of the respective ingredients and mixing to homogeneouscondition. Furthermore, the compositions may be readily formulated assingle-package formulations or multi-part formulations that are mixed atthe point of use, preferably multi-part formulations. The individualparts of the multi-part formulation may be mixed at the tool or in astorage tank upstream of the tool. The concentrations of the respectiveingredients may be widely varied in specific multiples of thecomposition, i.e., more dilute or more concentrated, and it will beappreciated that the compositions described herein can variously andalternatively comprise, consist or consist essentially of anycombination of ingredients consistent with the disclosure herein.

Accordingly, another aspect relates to a kit including, in one or morecontainers, one or more components adapted to form the compositionsdescribed herein. Preferably, the kit includes, in one or morecontainers, the preferred combination of at least one corrosioninhibitor, optionally water, optionally at least one etchant, optionallyat least one chelating agent, optionally at least one passivating agent,and optionally at least one complexing agent, for combining with waterat the fab or the point of use. The containers of the kit must besuitable for storing and shipping said cleaning composition components,for example, NOWPak® containers (Advanced Technology Materials, Inc.,Danbury, Conn., USA). The one or more containers which contain thecomponents of the removal composition preferably include means forbringing the components in said one or more containers in fluidcommunication for blending and dispense. For example, referring to theNOWPak® containers, gas pressure may be applied to the outside of aliner in said one or more containers to cause at least a portion of thecontents of the liner to be discharged and hence enable fluidcommunication for blending and dispense. Alternatively, gas pressure maybe applied to the head space of a conventional pressurizable containeror a pump may be used to enable fluid communication. In addition, thesystem preferably includes a dispensing port for dispensing the blendedcleaning composition to a process tool.

Substantially chemically inert, impurity-free, flexible and resilientpolymeric film materials, such as high density polyethylene, arepreferably used to fabricate the liners for said one or more containers.Desirable liner materials are processed without requiring co-extrusionor barrier layers, and without any pigments, UV inhibitors, orprocessing agents that may adversely affect the purity requirements forcomponents to be disposed in the liner. A listing of desirable linermaterials include films comprising virgin (additive-free) polyethylene,virgin polytetrafluoroethylene (PTFE), polypropylene, polyurethane,polyvinylidene chloride, polyvinylchloride, polyacetal, polystyrene,polyacrylonitrile, polybutylene, and so on. Preferred thicknesses ofsuch liner materials are in a range from about 5 mils (0.005 inch) toabout 30 mils (0.030 inch), as for example a thickness of 20 mils (0.020inch).

Regarding the containers for the kits, the disclosures of the followingpatents and patent applications are hereby incorporated herein byreference in their respective entireties: U.S. Pat. No. 7,188,644entitled “APPARATUS AND METHOD FOR MINIMIZING THE GENERATION OFPARTICLES IN ULTRAPURE LIQUIDS;” U.S. Pat. No. 6,698,619 entitled“RETURNABLE AND REUSABLE, BAG-IN-DRUM FLUID STORAGE AND DISPENSINGCONTAINER SYSTEM;” and U.S. Patent Application No. 60/916,966 entitled“SYSTEMS AND METHODS FOR MATERIAL BLENDING AND DISTRIBUTION” filed onMay 9, 2007 in the name of John E. Q. Hughes, and PCT/US08/63276entitled “SYSTEMS AND METHODS FOR MATERIAL BLENDING AND DISTRIBUTION”filed on May 9, 2008 in the name of Advanced Technology Materials, Inc.

As applied to microelectronic manufacturing operations, the cleaningcompositions are usefully employed to clean post-plasma etch residuefrom the surface of the microelectronic device, and may be applied tosaid surface before or after the application of other compositionsformulated to remove alternative materials from the surface of thedevice. The compositions described herein do not damage ILD materials onthe device surface and preferably remove at least 90% of the residuepresent on the device prior to removal processing, more preferably atleast 95%, and most preferred at least 99% of the residue to be removedis removed.

In post-plasma etch residue removal application, the composition may beapplied in any suitable manner to the device to be cleaned, e.g., byspraying the composition on the surface of the device to be cleaned, bydipping the device to be cleaned in a static or dynamic volume of thecomposition, by contacting the device to be cleaned with anothermaterial, e.g., a pad, or fibrous sorbent applicator element, that hasthe composition absorbed thereon, or by any other suitable means, manneror technique by which the composition is brought into removal contactwith the device to be cleaned. Further, batch or single wafer processingis contemplated herein.

In use of the compositions for removing post-plasma etch residue frommicroelectronic devices having same thereon, the composition typicallyis statically or dynamically contacted with the device for a time offrom about 1 minute to about 30 minutes, preferably about 1 minute to 10minutes, at temperature in a range of from about 20° C. to about 90° C.,preferably about 40° C. to about 70° C., and most preferably about 50°C. to about 60° C. Preferably, the contacting is static. Such contactingtimes and temperatures are illustrative, and any other suitable time andtemperature conditions may be employed that are efficacious to at leastpartially remove the post-etch residue material from the device. “Atleast partial removal” of the residue material from the microelectronicdevice corresponds to at removal of at least 90% of the material,preferably at least 95% removal. Most preferably, at least 99% of saidresidue material is removed using the compositions described herein.

Following the achievement of the desired removal action, thecompositions may be readily removed from the device to which it haspreviously been applied, e.g., by rinse, wash, or other removal step(s),as may be desired and efficacious in a given end use application of thecompositions described herein. For example, the device may be rinsedwith a rinse solution including deionized water and/or dried (e.g.,spin-dry, N₂, vapor-dry etc.).

When necessary, a post-clean bake step and/or an isopropanol vapor-drystep may be necessary to remove non-volatile materials that may absorbinto the pores of the ILD materials so as not to change the capacitanceof the low-k dielectric materials.

Another aspect relates to the improved microelectronic devices madeaccording to the methods described herein and to products containingsuch microelectronic devices.

A still further aspect relates to methods of manufacturing an articlecomprising a microelectronic device, said method comprising contactingthe microelectronic device with a composition for sufficient time toclean post-plasma etch residue from the microelectronic device havingsaid residue thereon, and incorporating said microelectronic device intosaid article, wherein the composition includes at least one corrosioninhibitor, water, optionally at least one chelating agent, optionally atleast one etchant, optionally at least one passivating agent, andoptionally at least one complexing agent.

A still further aspect relates to methods of manufacturing an articlecomprising a microelectronic device, said method comprising contactingthe microelectronic device with a composition for sufficient time toclean post-plasma etch residue from the microelectronic device havingsaid residue thereon, and incorporating said microelectronic device intosaid article, wherein the composition includes at least one corrosioninhibitor, water, optionally at least one chelating agent, optionally atleast one etchant, optionally at least one passivating agent, andoptionally at least one complexing agent.

In yet another aspect, the compositions described herein may be utilizedin other aspects of the microelectronic device manufacturing process,i.e., subsequent to the post-plasma etch residue cleaning step. Forexample, the compositions may be used to remove post-ash residue and/orthey may be diluted and used as a post-chemical mechanical polishing(CMP) clean. Alternatively, the compositions described herein may beused to remove contaminating materials from photomask materials forre-use thereof.

In yet another aspect, an article of manufacture is described, saidarticle comprising a microelectronic device substrate, residue material,and a cleaning composition, wherein the cleaning composition may be anycomposition described herein, and wherein the residue material isselected from the group consisting of titanium-containing residue,polymeric-residue, copper-containing residue, tungsten-containingresidue, cobalt-containing residues, and combinations thereof.

Although the invention has been variously disclosed herein withreference to illustrative embodiments and features, it will beappreciated that the embodiments and features described hereinabove arenot intended to limit the invention, and that other variations,modifications and other embodiments will suggest themselves to those ofordinary skill in the art, based on the disclosure herein. The inventiontherefore is to be broadly construed, as encompassing all suchvariations, modifications and alternative embodiments within the spiritand scope of the claims hereafter set forth.

1. An aqueous cleaning composition, comprising at least one corrosioninhibitor, water, optionally at least one chelating agent, optionally atleast one etchant, optionally at least one passivating agent, andoptionally at least one complexing agent, wherein said aqueous cleaningcomposition is suitable for cleaning post-plasma etch residue from amicroelectronic device having said residue thereon.
 2. (canceled)
 3. Thecleaning composition of claim 1, comprising the at least one etchant. 4.The cleaning composition of claim 3, wherein the at least one etchantcomprises a fluoride species selected from the group consisting ofhydrofluoric acid, fluoroboric acid, tetramethylammoniumhexafluorophosphate, ammonium fluoride salts, ammonium bifluoride salts,tetrabutylammonium tetrafluoroborate, tetramethylammoniumtetrafluoroborate, tetraethylammonium tetrafluoroborate,tetrapropylammonium tetrafluoroborate, tetrabutylammoniumtetrafluoroborate, propylene glycol/HF, propyleneglycol/tetraalkylammonium fluoride, propyleneglycol/benzyltrimethylammonium fluoride, and combinations thereof. 5.The cleaning composition of claim 3, wherein the at least one etchantcomprises a fluoride selected from the group consisting of ammoniumbifluoride, tetrabutylammonium tetrafluoroborate, and combinationsthereof.
 6. The cleaning composition of claim 1, comprising the at leastone passivating agent, wherein the at least one passivating agentcomprises a species selected from the group consisting of boric acid,3-hydroxy-2-naphthoic acid, malonic acid, iminodiacetic acid, andmixtures thereof.
 7. The cleaning composition of claim 3, wherein the atleast one etchant comprises a quaternary phosphonium tetrafluoroboratehaving the formula PR₄BF₄, wherein R may be the same as or differentfrom one another and is selected from the group consisting of hydrogen,straight-chained C₁-C₆ alkyl, branched C₁-C₆ alkyl, or cyclic C₁-C₆alkyl, straight-chained C₆-C₁₀ aryl, and branched C₆-C₁₀ aryl.
 8. Thecleaning composition of claim 6, wherein the at least one passivatingagent comprises boric acid.
 9. The cleaning composition of claim 1,wherein the at least one metal corrosion inhibitor comprises a speciesselected from the group consisting of benzotriazole (BTA),1,2,4-triazole (TAZ), 5-aminotetrazole (ATA), 1-hydroxybenzotriazole,5-amino-1,3,4-thiadiazol-2-thiol, 3-amino-1H-1,2,4 triazole,3,5-diamino-1,2,4-triazole, tolyltriazole, 5-phenyl-benzotriazole,5-nitro-benzotriazole, 3-amino-5-mercapto-1,2,4-triazole,1-amino-1,2,4-triazole, 2-(5-amino-pentyl)-benzotriazole,1-amino-1,2,3-triazole, 1-amino-5-methyl-1,2,3-triazole,3-mercapto-1,2,4-triazole, 3-isopropyl-1,2,4-triazole,5-phenylthiol-benzotriazole, halo-benzotriazoles (halo=F, Cl, Br, I),naphthotriazole, 1H-tetrazole-5-acetic acid, 2-mercaptobenzothiazole(2-MBT), 1-phenyl-2-tetrazoline-5-thione, 2-mercaptobenzimidazole(2-MBI), 4-methyl-2-phenylimidazole, 2-mercaptothiazoline,2,4-diamino-6-methyl-1,3,5-triazine, thiazole, imidazole, benzimidazole,triazine, methyltetrazole, Bismuthiol I, 1,3-dimethyl-2-imidazolidinone,1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole,diaminomethyltriazine, imidazoline thione,4-methyl-4H-1,2,4-triazole-3-thiol, 5-amino-1,3,4-thiadiazole-2-thiol,benzothiazole, tritolyl phosphate, indazole, adenine, cytosine, guanine,thymine, phosphate inhibitors, amines, pyrazoles, propanethiol, silanes,secondary amines, benzohydroxamic acids, heterocyclic nitrogeninhibitors, citric acid, ascorbic acid, thiourea,1,1,3,3-tetramethylurea, urea, urea derivatives, uric acid, potassiumethylxanthate, glycine, dodecylphosphonic acid, iminodiacetic acid,acid, boric acid, malonic acid, succinic acid, nitrilotriacetic acid,sulfolane, 2,3,5-trimethylpyrazine, 2-ethyl-3,5-dimethylpyrazine,quinoxaline, acetyl pyrrole, pyridazine, histadine, pyrazine,glutathione (reduced), cysteine, cystine, thiophene, mercapto pyridineN-oxide, thiamine HCl, tetraethyl thiuram disulfide,2,5-dimercapto-1,3-thiadiazoleascorbic acid, ascorbic acid, andcombinations thereof.
 10. The cleaning composition of claim 1,comprising the at least one complexing agent, wherein the at least onecomplexing agent comprises a species selected from the group consistingof butylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid(DTPA), ethylenediaminetetrapropionic acid,(hydroxyethyl)ethylenediaminetriacetic acid (HEDTA),N,N,N′,N′-ethylenediaminetetra(methylenephosphonic) acid (EDTMP),triethylenetetraminehexaacetic acid (TTHA),1,3-diamino-2-hydroxypropane-N,N,N′,N′-tetraacetic acid (DHPTA),methyliminodiacetic acid, propylenediaminetetraacetic acid,1,5,9-triazacyclododecane-N,N′,N″-tris(methylenephosphonic acid)(DOTRP),1,4,7,10-tetraazacyclododecane-N,N′,N″,N′″-tetrakis(methylenephosphonicacid) (DOTP), nitrilotris(methylene)triphosphonic acid,diethylenetriaminepenta(methylenephosphonic acid) (DETAP),aminotri(methylenephosphonic acid), 1-hydroxyethylidene-1,1-diphosphonicacid (HEDP), bis(hexamethylene)triamine phosphonic acid,1,4,7-triazacyclononane-N,N′,N″-tris(methylenephosphonic acid (NOTP),2-phosphonobutane-1,2,4-tricarboxylic acid, tartaric acid, gluconicacid, saccharic acid, glyceric acid, phthalic acid, maleic acid,mandelic acid, lactic acid, dihydroxybenzoic acid, catechol, gallicacid, propyl gallate, pyrogallol, cysteine, dihydroxysalicylic acid,glyphosphate, N-(Phosphonomethyl)-iminodiacetic acid, formic acid,propanoic acid, butanoic acid, N-(2-Hydroxyethyl)-iminodiacetic acid,pyridine-2,5-dicarboxylic acid, pyridine-2,6-dicarboxylic acid,7-Iodo-8-hydroxyquinoline-5-sulfonic acid, 2-amino-2-propylphosphonicacid, 1,2-dihydroxybenzene-4-sulfonic acid, 4,5-dihydroxy-1,3-benzenedisulfonic acid (Tiron), solochrome violet R, 3-hydroxy-2-naphthoicacid, chromotropic acid, nitroacetic acid, oxydiacetic acid,thiodiacetic acid, 8-hydroxy-7-(arylazo)-quinoline-5-sulfonic acid,2-oxobutanoic acid, acetoacetic acid, phenylserine, squaric acid,acetohydroxamic acid, 3-hydroxy-5,7-disulfo-2-naphthoic acid,2,3-dihydroxynaphthalene-6-sulfonic acid, sulfoxine, oxine,3,4-dihydroxybenzoic acid,2-(3,4-dihydroxyphenyl)-2-(1,1-benzopyran)-3,5,7-triol,3-hydroxy-7-sulfo-2-naphthoic acid, 1,2-dihydroxynaphthalene-4-sulfonicacid, N,N-bis(2-hydroxyethyl)glycine, N-(phosphonomethyl)-iminodiaceticacid, iminobis(methylenephosphonic acid), 1-oxopropane-1,2-dicarboxylicacid, propane-1,2,3-tricarboxylic acid,N,N′,N″-tris[2-(N-hydroxycarbamoyl)ethyl]-1,3,5-benzenetricarboxamide(BAMTPH), desferriferrioxamine-B, 1,7-dihydroxy-4-sulfo-2-naphthanoicacid, aspartic acid, glutamic acid, pyridoxal-5-(dihydrogenphosphate),pyridoxal, amino(phenyl)methylene-diphosphoric acid, ethylene glycoltetraacetic acid (EGTA),ethylenebis(imino-(2-hydroxyphenyl)methylene(methyl)-phosphonic acid)),N-(2-hydroxyethyl)-ethylenedinitrilo-N,N′,N′-triacetic acid,trimethylenedinitrilotetracetic acid,(2-dihydroxytrimethylene)-dinitrilotetracetic acid, xylenol orange,methylthymol blue, 3-hydroxyglutamic acid, L-phosphoserine,DL-amino-3-phosphopropanoic acid, and combinations thereof.
 11. Thecleaning composition of claim 1, wherein the amount of water is in arange from about 50 wt % to about 99 wt %, based on the total weight ofthe composition.
 12. The cleaning composition of claim 1, wherein the pHis in a range from about 0 to about
 7. 13. The cleaning composition ofclaim 1, wherein the composition is substantially devoid of abrasivematerial, oxidizing agents, ammonia, strong bases, and amidoximecomplexing agents.
 14. The cleaning composition of claim 1, furthercomprising at least one organic solvent.
 15. The cleaning composition ofclaim 1, further comprising a source of silica.
 16. The cleaningcomposition of claim 1, wherein said composition further comprisespost-plasma etch residue selected from the group consisting oftitanium-containing residue, polymeric-residue, copper-containingresidue, tungsten-containing residue, cobalt-containing residue, andcombinations thereof.
 17. (canceled)
 18. A method of removing materialfrom a microelectronic device having said material thereon, said methodcomprising contacting the microelectronic device with an aqueouscleaning composition for sufficient time to at least partially removesaid material from the microelectronic device, wherein the aqueouscleaning composition includes at least one corrosion inhibitor, water,optionally at least one chelating agent, optionally at least oneetchant, optionally at least one passivating agent, and optionally atleast one complexing agent.
 19. The method of claim 17, wherein thematerial comprises post-plasma etch residue comprising residue selectedfrom the group consisting of titanium-containing compounds, polymericcompounds, copper-containing compounds, tungsten-containing compounds,cobalt-containing compounds, and combinations thereof.
 20. The method ofclaim 17, wherein said contacting comprises conditions selected from thegroup consisting of: time of from about 1 minute to about 30 minutes;temperature in a range of from about 40° C. to about 70° C.; andcombinations thereof.